Last year Samsung introduced the eUFS 3.0 storage that could reach 410MBs write speeds, and now it starts manufacturing 512GB eUFS 3.1 that should bring three times faster speed in sequential writes. The mobile memory breaks the 1 GB/s performance threshold and is aimed for upcoming flagships. The VP of Memory Sales & Marketing at Samsung, Cheol Choi, said the new mobile storage will practically remove the worry about the bottleneck users face with conventional storage cards. The new standard is reflecting Samsung's "continuing commitment to supporting the rapidly increasing demands...
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